Abstract
Highly ordered AlN nanowire arrays were synthesized via a simple physical vapor deposition method on sapphire substrate. The nanowires have an extremely sharp tip <10nm, with the average length around 3 μm. Raman spectroscopy analysis on the AlN nanowire arrays revealed that the lifetime of the phonons is shorter than that in bulk AlN. The transmission spectra of the AlN nanowires showed a blueshift ∼0.27eV at the absorption edge with that of the bulk AlN, which is closely related to the small size of the nanowires.
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