Raman and Photoluminescence Spectroscopy Studies On Porous Silicon Nanostructures

Abstract

In this work, the study of photoluminescence (PL) and Raman spectroscopy of porous silicon nanostructures (NPSi) have been carried out. The samples were prepared by photo‐electrochemical anodization method using p‐type silicon wafer based. Photoluminescence measurement of NPSi shows increase of PL intensity and blue shift with increasing of etching time. The varies etching time from 20 min to 40 min produced PL emission at a range of 550–800 nm which is in the range of visible PL band. While Raman Spectroscopy measurement shows the spectra were asymmetry and broaden when etching time increase from 20 min to 40 min [Fig.2]. It may due to lattice mismatch strain and part of distortion when porous layer form with increasing the etching time. The photon energy and full half width maximum (FWHM) measurement were carried out to study the optical properties of NPSi which can be used to study the quantum confinement effect.