Photoluminescence and Raman properties of porous silicon at different etching times and current densities

Abstract

We study the Photoluminescence (PL) and raman properties of porous silicon as function of etching time and current density. The result shows that PL spectra give a blueshift trend and increasing intensity when etching time and current density increase. Samples that strongly emit at visible range then were analyzed using Raman measurement. As etching time increase, it shows that the Raman spectra of porous silicon slightly shift from bulk crystalline Silicon spectrum. A full half width maximum (FWHM) is gradually increasing with increasing current density.