Abstract
Ammonia- (NH3-) free, hydrogenated amorphous silicon nitride (a-SiNx:H) thin films have been deposited using silane (SiH4) and nitrogen (N2) as source gases by plasma-enhanced chemical vapour deposition (PECVD). During the experiment, SiH4 flow rate has been kept constant at 5 sccm, whereas N2 flow rate has been varied from 2000 to 1600 sccm. The effect of nitrogen flow on SiNx:H films has been verified using Raman analysis studies. Fourier transform Infrared spectroscopy analysis has been carried out to identify all the possible modes of vibrations such as Si–N, Si–H, and N–H present in the films, and the effect of nitrogen flow on these parameters is correlated. The refractive index of the above-mentioned films has been calculated using UV-VIS spectroscopy measurements by Swanepoel’s method.
Highlights
Amorphous silicon nitride (a-SiNx) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) are considered to be one of the most promising materials in semiconductor industry as gate dielectrics, isolation materials, diffusion barriers, and acoustic wave devices on semiconductor substrates [1, 2]
Fourier transform Infrared (FTIR; Bruker Alpha T) spectroscopy studies have been carried out in the wave number range of 400–4000 cm−1 in attenuated total reflection (ATR) mode in order to identify various chemical bonding occurring between nitrogen, silicon, and hydrogen
FTIR analysis is a nondestructive versatile tool in identification of various vibrational modes that occur in the materials and in determining the nature of chemical bonds present in the material
Summary
This Conference Paper is based on a presentation given by S. Bhattacharya at “International Conference on Solar Energy Photovoltaics” held from 19 December 2012 to 21 December 2012 in Bhubaneswar, India. Ammonia- (NH3-) free, hydrogenated amorphous silicon nitride (a-SiNx:H) thin films have been deposited using silane (SiH4) and nitrogen (N2) as source gases by plasma-enhanced chemical vapour deposition (PECVD). The effect of nitrogen flow on SiNx:H films has been verified using Raman analysis studies. Fourier transform Infrared spectroscopy analysis has been carried out to identify all the possible modes of vibrations such as Si–N, Si–H, and N–H present in the films, and the effect of nitrogen flow on these parameters is correlated. The refractive index of the above-mentioned films has been calculated using UV-VIS spectroscopy measurements by Swanepoel’s method
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