Abstract
This study investigates the crystallization and compositional changes in amorphous silicon nitride (SiN x ) thin films induced by heat treatment at elevated temperatures in air. The films were synthesized by plasma enhanced chemical vapor deposition (PECVD) method. It is found that PECVD SiN x films crystallize at 1148 K, which is much lower than that reported in the literature for silicon nitride powders and thin films. The crystallization occurs in the form of small silicon nitride crystal clusters scattered in the film, while the rest of the film partially oxidizes to amorphous silicon oxynitride. The crystallized silicon nitride is found to be α -Si 3 N 4 .
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