Abstract
In this paper, we report on electrical properties and Raman scattering of amorphous GaAs1-x Nx deposited on p-type crystalline silicon (c-Si(p)) substrates. The aim of this study is the investigation of the dielectric character of GaAs1-x Nx in view of its applications in MIS structures. The “compound” GaAs1-x Nx is obtained by reactive RF sputtering of a GaAs target. The electrical characteristics of the a-GaAs1-x Nx /c-Si(p) heterostructures present a MIS-like structure behaviour with some imperfections. Raman scattering points out that a-GaAs1-x Nx is a wide gap material which is formed by the substitution of arsenic by nitrogen in the GaAs network. For substitution ratios below 25–30%, the material obtained would be an alloy whose vibrational behaviour is a single mode. Beyond 30%, it would be in a very inhomogeneous phase, infact polyphased, and would present a phase of hexagonal origin (GaN).
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