Abstract
The effect of swift heavy ion (SHI) irradiation on InGaAs/GaAs heterostructures isstudied using Raman spectroscopy and atomic force microscopy (AFM). Thestructures consist of molecular beam epitaxy (MBE) grown InGaAs layers onGaAs(001), having layer thicknesses of 12, 36, 60 and 96 nm. After irradiation, theGaAs type longitudinal optical (LO) mode blue shifted to higher frequency inthin samples and red shifted towards lower frequency in thick samples. Theseresults are discussed invoking the penetration depth of the probe radiation(λ = 514.5 nm) in InGaAs. Deconvoluting the Raman spectra of thin samples indicates a compressivestrain developed in the substrate, close to the interface upon irradiation. This modificationand diffusion of indium across the interface results in an increase of strain andreduction of the defect densities in the InGaAs layer. The variations in FWHMof the Raman modes are discussed in detail. The surface morphology of theseheterostructures has been studied by AFM before and after SHI irradiation. Thesestudies, combined with Raman results, help to identify different relaxation regimes.
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