Abstract
We report on a combined atomic force microscopy, Raman spectroscopy, and transmission electron microscopy study of InAs/Al(Ga)As and AlAs/InAs quantum dot nanostructures grown by molecular beam epitaxy in the Stranski–Krastanov growth mode on (001)-oriented GaAs substrates. Structure periods of 50 nm and 100 nm were determined by atomic force microscopy of cleaved as well as ion-milled sample surfaces and were confirmed by high resolution transmission electron microscopy. Spatially resolved Raman spectroscopy analysis of a beveled surface allows profiling the Raman intensity of phonon modes. An optimal access to the spatially dependent changes in the phonon spectra is achieved by polishing the samples at an angle of 5–7 degrees with respect to the original sample surface plane. Such analysis allowed the localization of individual quantum dot layers. This opens a way to the structural characterization of quantum dot multilayers by the combination of atomic force microscopy and Raman spectroscopy.
Published Version
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