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Abstract
Thin films of SnSe 2 were prepared by vacuum evaporation. A two-source evaporation technique was used to prepare doped thin films. The variation in the resistivity with the preparation conditions and with temperature (100–500 K) was studied. Thin films of SnSe 2 were shown to be stable below 130°C. By doping with tin impurities we were able to reduce the resistivity to a few ohm centimetres. The high resistivity after annealing or heat treatments nd in the case of high substrate temperatures was interpreted as due to ionization and redistribution of impurities and to a partial transformation of SnSe 2 to SnSe.
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