Abstract
Tin(IV) selenide (SnSe2) thin films 120–280nm in thickness are obtained through heating SnSe films at 350°C, in the presence of Se-vapor. Thin film of SnSe deposited from a chemical bath is of orthorhombic crystal structure, with a band gap, Eg, of 0.94eV, and p-type conductivity of 0.3Ω−1cm−1. Thin film of SnSe2 280nm in thickness of hexagonal crystalline structure, with Eg of 1.2eV and n-type electrical conductivity of 2Ω−1cm−1 is produced from SnSe film 260nm in thickness. The SnSe2 film shows a Hall mobility of 10cm2/(Vs), carrier (electron) concentration 1017–1018cm−3 and thermoelectric power of −390μV/K. The thin film of SnSe2 formed this way is stable during further heating at temperatures up to 430°C, but it reverts to p-type SnSe thin film when heated at 530°C. Applications of these SnSe and SnSe2 thin films are considered.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
