Raised source drain metal diffusion in Finfet

Abstract

The Double Gate FinFET has been designed for 90nm, 60nm and 30nm as an alternative solution to bulk devices using TCAD software. The FinFET with independent gate (IDG) structure is proposed to control V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> . When the V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> is controlled the leakage current can be reduced by improving its current driving capability. Here the source and drain areas are doped with semi conductor material along with metal. Then the occurrence of schottky barrier will arise which will reduce the device performance. In order to reduce the effect of schotkky barrier the doping concentration have to be changed within source and drain regions.The metal used for the front gate and back gate is TiN which has got a work fuction of 4.65eV. The work function is a very important consideration in the selection of metal for the gate structure and also it affects the V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> and the performance of a device. Since TiN has low sheet resistance and low parasitic capacitance the V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> can be controlled. By improving the performance of the FinFET device, the stability of memory cell can be improved.