Raised Ge-Source with n+ pocket and recessed drain line TFET: A proposal for biosensing applications

Abstract

In this paper, we present a novel raised Ge-source with an n+ pocket and recessed drain line Tunnel Field-Effect Transistor (TFET). It offers enhanced performance for potential biosensing applications. The proposed device comprises a Ge source with a low bandgap, an n+ pocket, and a larger tunneling area. This results in improved performance characteristics: an ON current of 54.27 μA/μm, an ON-current to OFF-current ratio of 1.5 × 1012, and an average subthreshold swing of 21.3 mV/dec. The recessed drain design eliminates ambipolarity, further enhancing performance. The study thoroughly investigates biosensing capabilities, including DC and transient analyses, evaluating charged and neutral biomolecules (uricase, biotin, 3-aminopropyltriethoxysilane, DNA, keratin, and gelatin). The proposed biosensor, with a higher drain current sensitivity of 1.2 × 109 for gelatin (k = 12) and 3.05 × 108 for keratin (k = 8), outperforms existing approaches, making our proposed biosensor a compelling choice for future low-power biomedical applications.