Abstract
In this paper, we present a new numerical approach for enhancing the resolving power of low-resolution (LR) images, which can be applied for failure analysis of microelectronic chips. The resolution improvement is based upon a numerical iterative comparison between a Radon transform of a high-resolution layout image and a Radon transform of an LR experimentally captured image of the same region of interest.
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Schedule a callMore From: IEEE transactions on device and materials reliability : a publication of the IEEE Electron Devices Society and the IEEE Reliability Society
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