Abstract
We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.
Highlights
Compared with hydrogenated amorphous silicon (a-Si:H), a material commonly used in thin film transistors (TFTs) that has sp[3] orbital of covalent bonding, indium gallium zinc oxide (IGZO) is composed of post-transition-metal cations and exhibits a distorted metal-oxygen-metal bonding, which causes the mean free path of carriers in IGZO to be considerably greater than the chemical bond distance.[25]
Room-temperature pulsed laser deposition (PLD) was first used to fabricate samples of IGZObased TFTs25 with a Hall mobility of 10 cm2V-1s-1 and had been a convenient and less expensive way of fabricating IGZO thin films owing to the ease of obtaining the same composition in thin film as in the target.[26,27,28,29,30,31,32,33]
The most interesting aspects of r.f. plasma-enhanced pulsed laser deposition (PEPLD) are (1) the additional energy that can be transferred from the r.f. plasma to the surface atoms during film deposition, and (2) using an r.f. plasma to affect the interactions between the plasma plume and the ambient gas
Summary
2. XRD spectra of IGZO thin films deposited on glass substrates using PLD and PEPLD at an r.f. power of 30 W and an oxygen vapor pressure of 100 mTorr. High oxygen pressure helps the formation of CAAC structures (inset of Fig. 4) indicates that the film fabricated through PEPLD at 150 mTorr exhibited strong peak intensity at 33°.
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