Abstract
IGZO thin films can be used as active layers of thin-film transistors and have been widely studied. However, amorphous indium gallium zinc oxide (IGZO) fabricated at room temperature is vulnerable in subsequent manufacturing processes, such as etching and sputtering; this limits IGZO thin film transistors’ (TFTs) use in commercial products. In this paper, we prepared a c-axis crystallized IGZO thin film by Radio Frequency (RF) sputtering at 180 °C, with a 50% O2 ratio and 110 W power. XRD images show that the crystallized film has an obvious diffraction peak near 31°, and the spacing between the crystal surfaces was calculated to be ≈0.29 nm. The HRTEM map confirmed the above results. The stability of IGZO thin films was investigated by etching them with an acid solution. The crystalline IGZO films exhibited better acid corrosion resistance, and their anticorrosion performance was 74% higher than that of amorphous IGZO (a-IGZO) films, indicating the crystalline IGZO film can provide more stable performance in applications.
Highlights
For their particular properties, transparent-oxide thin films can be used widely in thin film transistors (TFTs) as control units in liquid crystal displays (LCDs), flexible activematrix organic light-emitting diode (AM-OLED) displays, wearable devices, photoelectric devices, thermoelectric generators and chemical and biological sensors [1,2,3,4,5,6,7]
Membrane is considered the most promising active layer substitution for the traditional hydrogenated amorphous silicon (a-Si)-based TFT and the low temperature poly-silicon (LTPS)-based TFT used in the backplanes of LCD and AM-OLED displays
The deposition rate was obtained by the ratio of thickness to time of the thin film deposited on the glass substrate, under different parameters, and the thickness was determined by ellipsometer
Summary
Transparent-oxide thin films can be used widely in thin film transistors (TFTs) as control units in liquid crystal displays (LCDs), flexible activematrix organic light-emitting diode (AM-OLED) displays, wearable devices, photoelectric devices, thermoelectric generators and chemical and biological sensors [1,2,3,4,5,6,7]. IGZO TFTs have the advantages of high mobility, a reasonable on/off ratio, high optical transparency in the visible region and a large area of deposition at low temperatures [8,9]. In the development of large, high frequency, high resolution and low power flat panel displays for the generation, the signal delay and aperture ratio of the gate lines and data lines are main constraints.
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