Radio Frequency Power Dependence in Formation of SiO:CH Thin Films by Plasma-Enhanced Chemical Vapor Deposition

Abstract

SiO:CH films were prepared by capacitively coupled radio frequency (RF) plasma-enhanced chemical vapor deposition to investigate the dependence on RF power on the basis of plasma reactions and film properties. The RF power dependence can be divided into two broad categories, the reaction-controlled regime (regime R) and the flow rate-controlled regime (regime F). In the regime R, the introduced RF power initially dissociates and recombines the trimethylmethoxysilane reactant, and leads to drastic increase in deposition rate. In the regime F, the insufficient flow of reactants saturates the deposition rate. Moreover, the extra energy dissociates and recombines the reactant drastically and heats electrons in the plasma.