Abstract
The transitions between capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) were investigated using chemical vapor deposition (CVD) plasma with the internal RF multiturn antenna. The typical electron densities of both 1015/m3 in CCP mode and 1017/m3 in ICP mode were measured, and the measured electron temperature profile was hollow in the CCP mode, which was in contrast to the broadened temperature profile in the ICP mode. Finally, we succeeded in controlling the RF plasma transition by changing the gas density and also by supplying the direct current (DC) voltage.
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