Radio frequency plasma processing effects on the emission characteristics of a MeV electron beam cathode

Abstract

Experiments have proven that surface contaminants on the cathode of an electron beam diode influence electron emission current and impedance collapse. This letter reports on an investigation to reduce parasitic cathode current loss and to increase high voltage hold off capabilities by reactive sputter cleaning of contaminants. Experiments have characterized effective radio frequency (rf) plasma processing protocols for high voltage anode–cathode (A–K) gaps using a two-stage argon/oxygen and argon rf plasma discharge. Time-resolved optical emission spectroscopy measures contaminant (hydrogen) and bulk cathode (aluminum) plasma emission versus transported axial electron beam current turn on. Experiments were performed at accelerator parameters: V=−0.7 to −1.1 MV, I(diode)=3–30 kA, and pulse length=0.4–1.0 μs. Experiments using a two-stage low power (100 W) argon/oxygen rf discharge followed by a higher power (200 W) pure argon rf discharge yielded an increase in cathode turn-on voltage required for axial current emission from 662±174 kV to 981±97 kV. The turn-on time of axial current was increased from 100±22 to 175±42 ns.