Abstract
High plasma density chemical vapor deposition (HPD-CVD) is being developed for producing interlevel dielectrics in microelectronics fabrication. We present images of radical and electron densities in an Ar/SiH/sub 4/ HPD-CVD inductively coupled reactor produced by a three-dimensional equipment model. The silane feedstock and silyl (SiH/sub 3/) radicals are rapidly dissociated, resulting is densities which are maximum near the nozzles. The silylene (SiH/sub 2/) radicals, the most fragmented species included in the simulation, are the most uniformly distributed.
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