Radiatively controlled lifetimes in AlxGa1−xAs grown by metalorganic vapor phase epitaxy

Abstract

We report long minority charge carrier lifetimes in AlxGa1−xAs/AlyGa1−yAs x<y) double heterostructures grown by metalorganic vapor phase epitaxy. The lifetime (τbulk=8.8 μs) is found to be controlled by radiative processes in samples with aluminum concentrations of x=0.10 for the active regime and y=0.20 for the cladding layers; an extremely low interface recombination velocity of S≂6.5 cm/s is found. At higher aluminum concentrations both the bulk and interface recombination rate increase rapidly.