Abstract
We have investigated the effect of different metal organic vapor phase epitaxy (MOVPE) preparation routes for the In 0.53 Ga 0.47 As/InP interface on the interface recombination velocity and its lateral interface homogeneity. The preparation routines in a MOVPE reactor were varied in order to initiate a lateral homogenous layer growth and to form the InGaAs/InP interface as sharp as possible, which is of major importance for the performance of thin device structures such as tunnel junctions in multi junction solar cells. For the growth characterization, we employed in situ reflectance difference/anisotropy spectroscopy and low energy electron diffraction to depict the favourable interface formation routes. As the minority carrier lifetime is a critical measure for the opto-electronic performance of both bulk and interface quality, minority carrier lifetime dependence in a corresponding InP/InGaAs/InP double hetero structure was measured with spatially resolved and time-resolved photoluminescence using a confocal single photon counting setup.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
