Abstract
Radiative lifetimes were calculated using weakest bound electron potential model theory for 4s ns S1/2 (n ≥ 7), 4s np P 0 1/2 (n ≥ 5), 4s np P 0 3/2 (n ≥ 6), 4s nd D 3/2 (n ≥ 6), 4s nd D 5/2 (n ≥ 6) series in neutral gallium. The use of the quantum defect theory and Martin’s expressions allowed us to supply lifetime values along by means of the series above. The results obtained in this work presented good agreement with theoretical and experimental values. Moreover, some lifetime values not existing in the literature for highly excited Rydberg states in gallium atom were obtained using this method.
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