Abstract
We report the ultraviolet absorption of boron-bound excitons at low temperature in a single crystal of diamond grown by chemical vapor deposition. The no-phonon (NP) and phonon-assisted lines are identified by comparison with cathodoluminescence. The oscillator strength of the NP lines was found to be 3.0 × 10−5 based on the measured absorption cross-section. This value is discussed in terms of the scaling law known for doped silicon, where the oscillator strength varies proportionally to Eloc2.5, with Eloc being the localization energy of excitons on acceptors. More importantly, we also could assess the oscillator strength of the dominant transverse optical phonon-assisted transition, which is found to be equal to 1.2×10−3. The associated radiative lifetime for the boron-bound exciton is 1.8 μs, which is much longer than the non-radiative Auger lifetime that governs its decay.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
