Abstract
The behaviour of exciton binding energy and the radiative life time of exciton in a strained GaN/Ga1-xAlxN cylindrical quantum dot are investigated with and without the effect of built-in electric field. Built-in electric field due to piezoelectricity and spontaneous polarization and the anisotropy of the wurtzite crystal structures and the strains of the quantum dot are included. The result elucidates the strong built-in electric field has influence on the oscillator strength and the recombination life time of the exciton.
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