Radiation-tolerant dose sensor based on undoped amorphous silicon

Abstract

Single-crystal silicon diodes are replacing gas-filled dose-rate meters because they are batch-processable, mechanically robust, compact, and operable at low voltages. However, they are prone to radiation damage in high dose fields. Hydrogenated amorphous silicon (a-Si:H) provides the manufacturing and operational benefits of silicon while adding inherent radiation hardness because of its wider bandgap and disordered microstructure. Previously, sensors with tens of micrometers thick a-Si have been investigated for direct dose sensing in x-ray imaging applications. However, the limited charge carrier lifetimes of the medium can reduce the charge collection efficiency and thereby the sensitivity. If a higher density, higher Z active media is coupled to thin amorphous silicon active layers, then an additional indirect component can be added to this direct signal to exhibit ∼15 μGy/s dose-rate sensitivities at zero and low-bias (<0.5 V) operation. Here we show that thin (150, 300, 450 nm) a-Si:H optical sensors can produce external quantum efficiencies above 40% and internal quantum efficiencies that exceed 70 % over a broad band from 380 nm to 650 nm, resulting in dose-rate sensitivity even at 0 V. When the charge-collecting electrodes abutting the a-Si:H serve the dual purpose as reflective layers in a lossy Fabry-Perot cavity, then internal quantum efficiencies greater than 83 % can be realized in a 30 nm thick layer at 410 nm. Cobalt-60 gamma-ray irradiation to 100 kGy (air) shows no radiation-induced degradation for even the thicker 300 nm sample; rather, a radiation hardening effect is observed as evinced in reduced dark current.