Abstract
The optothermal properties of doped and undoped amorphous silicon- sulfur alloys have been studied using the optothermal transient emission radiometry (OTTER) technique. The optothermal decay signal was found to depend on the concentration of incorporated sulfur atoms in the material. The results have been correlated with the density of gap- state defects induced by sulfur atoms as determined from subgap absorption measurements. The OTTER technique has proved to be a viable alternative method for measuring the relative densities of defect states in the band gaps of amorphous silicon- sulfur alloys.
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