Abstract
The radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The detectors' mid-wave infrared performance degraded with increasing proton fluence ΦP up to 3.75 × 1012 cm−2 or, equivalently, a total ionizing dose = 500 kRad (Si). At this ΦP, an ∼31% drop in quantum efficiency η, ∼2 order increase in dark current density JD, and consequently, >1 order drop in calculated detectivity D* were observed. Proton damage factors were determined for η and D*. Arrhenius-analysis of temperature-dependent JD measurements reflected significant changes in the activation energies following irradiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
