Radiation study of TFET and JLFET-based devices and circuits: a comprehensive review on the device structure and sensitivity

Abstract

All electronic devices when used in a radiation environment undergo significant changes in their electrical properties. It is interesting to explore the effects of radiation, not only on conventional MOSFET devices but also on novel devices like FinFET, Tunneling Field Effect Transistor (TFET), and Junctionless Field Effect Transistor (JLFET). This study presents a systematic review of radiation studies on TFET and JLFET-based devices/circuits. TFET and JLFET have gained popularity in recent days due to their wide use in ultra-scaled designs than conventional CMOS. The effect of radiation on a divergent range of TFET and JLFET devices and circuits is explored. The variations in DC characteristics and electrical parameters under the influence of radiation strikes are analyzed in detail. The radiation effects like Total Ionizing Dose (TID), and Single Event Upset (SEU) are noted for these devices/circuits. The radiation study on different devices shows that these devices are sensitive to Single Event Effect (SEE), steeper Subthreshold Swing (SS), increase in Electron Hole Pair (EHP) production, increase in drain current (ID), and increase in collected charge (QC), decrease in bipolar gain and trans-conductance.