Abstract
Latest generation GaN-on-Si power transistors (EPC7XXX Series), specifically designed for high radiation resistance and low dynamic on-resistance, are rigorously tested for: (i) hard-switching dynamic RDS(on); (ii) single event effects (SEE); (iii) total ionizing dose (TID); (iv) neutron displacement damage; and (v) low dose gamma ray (LDRs). The combined results show excellent electrical stability and radiation immunity, demonstrating a major step forward compared to earlier generation GaN-on-Si devices.
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