Abstract
The chemical bonding of zirconium silicate films were examined by FTIR. The capacitance-voltage (C-V) measurements before and after irradiation were performed at high frequency. Furthermore, significant changes were observed depending on the radiation dose of the oxide traps and the intensity of the interface state. The sensitivity of this MOS capacitor is 4.3, 31.3 and 15.6 times less sensitive compared to the same thickness as Sm2O3, Al2O3 and Gd2O3. Therefore, it can be used as radiation-resistant material in nuclear reactors and space applications due to its stable electrical characteristics compared to other defined dielectrics. Interface states, (Nit) Barrier potential (Φb) and oxide traps (Not) have also been investigated depending on the radiation effects. Φb is one of these important electrical properties. Φb values decreased with increasing in radiation dose. Besides, radiation and frequency dependent dielectric constant (ε′), dielectric loss (ε″) and dielectric loss tangent (tanδ) and conductivity (σac) of zirconium silicate were investigated. It is concluded that high-k zirconium Silicate is suitable for electronics applications in radiation harsh environment.
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