Abstract
Influence of fast neutrons with the energy of 100÷13 MeV and fluence up to 10 14 n/cm 2 upon InAs and InSb microcrystals and GaAs epitaxial layers, being doped by donor, amphoteric, isovalent, rare-earth and transitional impurities, was studied in the present work. It is found out that changes of main carrier concentration caused by irradiation, do not exceed 0.1% for the best InSb and GaAs samples exposed to such complex doping. The model is proposed which explains the effect of complex metallurgical doping on the improvement of radiation resistance of investigated materials.
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