Abstract
ABSTRACTWe have observed for the first time reversible changes in the sheet carrier concentration of the rapid thermally annealed Se and Zn implanted GaAs samples during subsequent heat treatments. The electrical profiles of the implanted samples have also been modified during the annealing processes. By observing the initial rate of change in the carrier concentration, an activation energy of about 2 eV is obtained which is thought to correspond to the diffusion of gallium atoms/vacancies.
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