Abstract
We have demonstrated using of ion beam irradiation to control the atomic composition and properties of thin film materials by three different ways. Selective removal of atoms (SRA) technique allows us to transform Co3O4 to Co. By EELS on cross-section samples in STEM mode it was shown that target depth recovery profile has no monotonic character that proved the radiation nature of SRA process. Selective displacement of Atoms (SDA) technique under oxygen ion irradiation was used to control the critical current of ultrathin superconductive NbN film that can have an implementation during new cryogenic logic device design.
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