Radiation intensity of optical transitions in the germanium/silicon nanosystems with germanium quantum dots

Abstract

Dipole-allowed optical transitions between quasi-stationary and stationary states, which occur over the spherical surface of a single germanium quantum dot (QD) embedded in a silicon matrix, are theoretically investigated. These optical electron transitions, which occur in the real space of the silicon matrix, allow for solving the problem of a significant increase in the radiation intensity in germanium/silicon heterostructures with germanium QDs. Long-lived quasistationary and stationary states will make it possible to realize high-temperature quantum Bose-gases states in the nanosystem under study.