Abstract
This mini-review examines the optical properties of nanoheterostructures of the second type, consisting of germanium quantum dots expressed in a silicon matrix. It has been shown that the radiation intensities and the lifetimes associated with electron transitions between quasistationary states of a single germanium quantum dot, take significant values compared to similar values in germanium/silicon nanosystems. This effect will make it possible to create a new generation of efficient light-emitting devices based heterostructures with germanium quantum dots. In addition, long-lived quasistationary states will make it possible to realize high-temperature quantum Bose-gases states in the nanosystem under study.
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