Abstract

Commercial SiC MOSFETs were exposed to ionizing radiation to characterize the radiation response and to compare the observed threshold voltage (VT) instability post-radiation exposure, with the VT instability following bias temperature stress (BTS) testing. As expected, a large number of positively charged oxide traps were present in these devices following irradiation, resulting in a significant negative VT shift. However, the observed VT instability following irradiation was much smaller than that for similarly processed devices exposed to a BTS. Irradiated devices subjected to unbiased thermal treatments experienced a significant annealing of trapped holes above 100 °C. However, isochronal annealing treatments did not significantly alter the number of switching oxide traps, suggesting that a large portion of the traps activated by irradiation may lie deeper within the SiO2, beyond the tunneling distance from the SiC.

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