Abstract
Spectral photoconductivity is a very efficient tool to explore the forbidden gap of wide gap semiconductors, detecting band-to-band or deep level-to-band transitions of the charge carriers. In this paper we present some results obtained by spectral photoconductivity concerning HVPE (hydride vapour phase epitaxy) grown gallium nitride submitted to high energy proton irradiation. The behaviour of the material before and after irradiation may give information on the characteristics of the deep bands and their association to surface or bulk defects. In particular we observed how irradiation quenches the yellow band and correspondingly inhibits persistent photocurrent effects. Persistent photocurrent measurements carried out at different temperatures give further insights on the radiation-induced effects. The possible correlation among the deep-related transitions and the persistent photo-effects is here proposed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
