Abstract
Valence band structures and their strain effects in GaN have been investigated by optical spectroscopy for thick GaN films with high optical quality grown by hydride vapor phase epitaxy. Excitons associated with the A, B, and C valence bands are clearly observed in reflectance measurements without modulation techniques. It is found that the exciton energies shift with the film thickness because of the relaxation of the residual strain. From the quantitative analysis of this behavior, we have precisely determined the valence band splitting parameters in GaN as Δ1=10 meV, Δ2=5.5 meV, and Δ3=6.0 meV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
