Abstract
The relation between electrical conductivity and ESR characteristics in polythiophene upon doping has been studied by utilizing (I) a neutron activation technique and (II) a radiation-induced doping technique. (I) In iodine-doped polythiophene, (C 4H 2SI y) x, drastic increase in conductivity from 10 −8 to 10 −2 S/cm is observed at the fairly narrow dopant concentration region of 2 × 10 −3 < y < 5 × 10 −3; at this transitional region, the ESTR signal also changes significantly, showing a maximum spin density and a minimum linewidth. (II) By the irradiation under SF 6 atmosphere, the conductivity remarkably increases due to the radiation-induced doping effect; it has been clearly observed in situ that a new narrower ESR component ( ΔH pp ∼ ca. 1 G) with smaller g-value emerges and grows with increasing irradiation dose. These results are discussed to understand the semiconductor to metal transition in polythiophene, taking polaron and bipolaron models into account.
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