Abstract
Abstract In the present work we have studied the most important parameters which can influence the radiation induced diffusion mechanism of Xe ions implanted into photoresist films. With this aim we have Ar post-bombarded the Xe implanted samples at a fixed Ar ion energy, covering a wide range of fluences. In addition the implantation fluences as well as the ion species used in the bombardment were changed. The results show that the radiation induced diffusion process undergoes a trapping-detrapping mechanism. The trapping probability is proportional to the implanted fluence, and the detrapping one depends on the kind of ion used in the bombarding experiment. Finally it is shown that the nuclear energy transfer plays an important role in the radiation induced diffusion mechanism.
Published Version
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