Abstract
Differently prepared specimen show after different irradiation treatments (VUV or X-ray) the same character of interface state distribution and hole trap related oxide charge. The dominating interface state generation process is considered to be a breaking-up of Si-H bonds. Centres of both hack bond configurations (Si3)≡Si-H and (Si2O)≡Si-H are involved, where the latter has stronger irradiation effects due to the lower bond energy. The radiation induced oxide charge consists of positively charged hole traps with a trap energy of Et = 6.3 eV. They are dischargeable by electron tunneling from the adjacent Si. This leads to a dynamical trapping behaviour dependent only on the hole current density. Our results confirm that the paramagnetic E'-centre constitutes the positively charged hole trap.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
