Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC

I Mandić ,John D Cressler ,E Spencer ,F M Newcomer ,A Seiden ,W Kononenko ,S Rescia ,N Dressnandt ,H Spieler ,M Wilder ,A.k Sutton ,Y Tazawa ,A.a Grillo ,H F-W Sadrozinski ,M Ruat ,Sergio Cañas Díez ,G.m Mayers ,Sam R Emerson ,Stanley D Phillips ,F Martinez-Mckinney ,M Ullán

doi:10.5170/cern-2009-006.439

Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC

I Mandić , John D Cressler + Show 19 more

https://doi.org/10.5170/cern-2009-006.439

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Publication Date: Jan 28, 2010

Citations: 8

Affiliation: National Research Council

#Silicon Germanium BiCMOS Technology #Liquid Argon Calorimeter + Show 8 more

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Abstract

We present the radiation hardness studies on the bipolar devices of the 130 nm 8WL Silicon Germanium (SiGe) BiCMOS technology from IBM. This technology has been proposed as one of the candidates for the Front-End (FE) readout chip of the upgraded Inner Detector (ID) and the Liquid Argon Calorimeter (LAr) of the ATLAS Upgrade experiment. After neutron irradiations, devices remain at acceptable performances at the maximum radiation levels expected in the Si tracker and LAr calorimeter.

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