A Fully Differential Low Phase Noise and Extra Linear VCO Design in SiGe BiCMOS Technology

Mirhojjat Seyedi ,J.L Gautierassoud,Massoud Dousti ,Farid Temçamani

doi:10.1109/ictta.2008.4530257

A Fully Differential Low Phase Noise and Extra Linear VCO Design in SiGe BiCMOS Technology

Mirhojjat Seyedi , J.L Gautierassoud + Show 2 more

https://doi.org/10.1109/ictta.2008.4530257

Copy DOI

Publication Date: Apr 1, 2008

Citations: 8

Affiliation: Islamic Azad University, Tehran, École Nationale Supérieure de l'Électronique et de ses Applications

#SiGe BiCMOS Technology #Low Phase Noise Voltage-controlled Oscillator + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

Fully differential voltage-controlled oscillator (VCO) design with a low phase noise and extra linear VCO gain (Kvco) for 5-GHz wireless applications in 0.35-mum SiGe (Silicon Germanium) BiCMOS technology is discussed in this paper. The phase noise level is -120.976 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.4 GHz. The Kvco changes from 214 MHz/V to 271 MHz/V. The tunability of the structure covers 786 MHz, from 4.642 GHz up to 5.428 GHz. Considering a current consumption of 3.13 mA, with 3.0 V voltage supply.

Full Text