Abstract
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current–voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.
Highlights
Silicon detectors generally satisfy the requirements of the modern physics experiments, the experimental physics develops in the direction of increasing radiation loads so the requirements for the detector materials radiation hardness are increasing
This paper describes the behavior of gallium arsenide (GaAs):Cr and silicon sensors irradiated with 20.9 MeV electron beam up to an absorbed dose of 1.5 MGy
We studied semi-insulating GaAs:Cr sensors made of n-GaAs material using the precision chromium doping technique
Summary
Silicon detectors generally satisfy the requirements of the modern physics experiments, the experimental physics develops in the direction of increasing radiation loads so the requirements for the detector materials radiation hardness are increasing. For GaAs: Cr sensors, the displacement of the MIP signal down to its overlap with the pedestal is due to a decrease in charge collection with the absorbed dose.
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