Abstract
Radiation tests of 32μm thick hydrogenated amorphous silicon n–i–p diodes have been performed using a high-energy 24GeV proton beam up to fluences of 2×1016protons/cm2. The results are compared to irradiation of similar 1μm and 32μm thick n–i–p diodes using a proton beam of 405keV at a fluence of 3×1013protons/cm2. All samples exhibited a drop of the photoconductivity and an increase in the dark leakage current under both high- and low-energy proton irradiation. An almost full recovery of the device performance was observed after a subsequent thermal annealing.
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