Abstract
Although the surface conductivity of a hydrogen-terminated diamond (H-diamond) enables production of high-performance field effect transistors (FETs), the total ionizing dose effect is yet to be clarified for H-diamond FETs. We fabricated a RADiation hardened H-terminated Diamond metal–oxide–semiconductor FET (RADDFET) using an oxide gate dielectric deposited at high temperatures. This paper describes its stable operation after 1 MGy irradiation. H-diamond films were prepared using microwave plasma assisted chemical vapor deposition with a p+ layer for reduction of contact resistance. The Al2O3 passivation layer was deposited by atomic layer deposition at 450 °C to achieve operation in high-temperature environment; then a RADDFET was fabricated on them using a Ru electrode. Several current–voltage characteristics were compared before irradiation and after certain dose levels up to 1 MGy. Before they were irradiated in air, the dose rate was measured using a cellulose triacetate film dosimeter. Even after an irradiation level of 1 MGy, the off-current at gate bias voltage (VG) of 3 V was more than six orders of magnitude lower than the on-current at VG of −6 V. Variation of the drain current density (JDS) in the measurements was less than 2%. The threshold voltage shifted approximately 1.7 V with 3 kGy of x ray irradiation, but no marked degradation was confirmed at higher levels. The subthreshold swings were 238, 215, and 264 mV/decade, respectively, after irradiation of 100 kGy, 300 kGy, and 1 MGy. These results indicate that the RADDFET was very stable at higher doses after initial stabilization.
Published Version
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