Radiation hardened 12T SRAM cell with improved writing capability for space applications

Abstract

This paper presents an inventive and extremely dependable radiation-hardened by-design (RHBD) 12T SRAM Cell with enhanced writing capability (RHWC-12T) for a space radiation environment. The Proposed RHWC-12T SRAM is designed on Cadence Virtuoso with quad-storage nodes and simulated in 45-nm CMOS technology with the supply voltage of 1.1 V and 27∘C operating temperature. The proposed cell is tolerant to both 0 to 1 and 1 to 0 SEUs (Single event upsets). Also, it provides better speed and stability compared to the other considered SRAM cells such as 6T, 10T Dohar, Quatro, We-Quatro, QUCCE-12T, and NQuatro. According to simulation findings, the proposed SRAM cell provides 1.053× better writing stability than the 10T Dohar SRAM cell. In addition, the write access time improves by 3.56× with 1.36× area overhead than 10T Dohar SRAM cell.