Abstract
The next upgrades of the HL-LHC (High Luminosity-Large Hadron Collider) are scheduled to reach fluences of $2 \times 10^{16} \rm{n}_{eq} /cm^2$. Silicon detectors will be exposed to high fluences of radiation, and RD50 (Radiation Hard Semiconductor Devices For High Luminosity Colliders) is a CERN R&D collaboration devoted to develop radiation hard silicon detectors for the HL-LHC. The collaboration explores different research fields structured in different areas: defect and material characterization explores the macroscopic properties of materials before and after irradiation, detector characterization tests the devices with different techniques, new detector structures developes new devices such as Low Gain Avalanche Detectors (LGAD) or 3D detectors and full detector systems integrates the electronic to the detector and studies the performance under high fluences.
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