Abstract
The effect of proton irradiation on the photovoltaic response of p-i-n InP solar cells that include an InP/InAsP multi-quantum well (MQW) layer in the intrinsic region is studied. Data from cells with three different quantum well structures are presented along with data from a control cell grown without MQW layer. The results show how the addition of the MQW's improves the solar energy conversion efficiency thereby allowing the base to be as thin a 1 μm while still maintaining a good photocurrent. In addition, the. radiation response of the MQW cells, is shown to be equal to or better than the InP control cell.
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