Abstract
InP and InGaAs layers were grown on multiquantum well (MQW) layers by LPE below 500°C without thermal degradation. The LPE growth of InP and InGaAs below 500°C is slow, but fast enough to fabricate the device. The carrier concentration of InP and InGaAs was controlled by doping below 500° C. It was confirmed that the thermal process in LPE growth of InGaAs on MQW layers below 500° C does not affect on the MQW structure.
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